GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Authors

D. Jena, H. Xing, L. Li, K. Nomoto, M. Pan, W. Li, A. Hickman, J. Miller, K. Lee, Z. Hu, S. J. Bader, S. M. Lee, & J. Hwang

Pub Type

Journal Paper

URL

Forum

IEEE Electron Device Letters (Volume: 41, Issue: 5, May 2020)

Joint Publication?

ComSenTer Team

Team Link