High-frequency radio links offer high capacity but suffer from high propagation losses. For useful range, we must supplement the performance of the Si CMOS VLSI RF beamforming ICs with efficient high-power amplifiers for the transmitters and low-noise amplifiers for the receivers.


We are designing power amplifiers in THz InP and SiGe HBT IC technologies. In addition, we are designing low-noise amplifiers in THz InP and SiGe HBT, THz InP HEMT IC technologies.


Power amplifier ICs with 50/100/200mW output power have been designed for 140/220/300GHz links and imaging systems. ICs will be returned from the foundry in fall 2019.

Team Leader

Mark Rodwell

Mark Rodwell (Ph.D. Stanford University 1988) holds the Doluca Family Endowed Chair in Electrical and Computer Engineering at UCSB. He directs the SRC/DARPA Research Center for THz Communications and Sensing, and manages the UCSB Nanofabrication Lab.  His research group develops nm and THz transistors, and millimeter-wave and sub-mm-wave integrated circuits. The work of his group and collaborators has been recognized by the 2010 IEEE Sarnoff Award, the 2012 IEEE Marconi Prize Paper Award, the 1997 IEEE Microwave Prize, the 1998 European Microwave Conference Microwave Prize, and the 2009 IEEE IPRM Conference Award.



A. Ahmed, U. Soylu, M. Seo, M. Urteaga, & M. Rodwell, “A Compact H-band Power Amplifier with High Output Power,” presented at the 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Atlanta, GA, June 7-9, 2021.

A. Ahmed, A. Farid, & M. Rodwell, “A 27.5dBm EIRP D-Band Transmitter Module on a Ceramic Interposer,” presented at the 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, June 7-9, 2021.

A. Farid, M. A. Abdelghany, U. Madhow, & M. Rodwell, “Dynamic Range Requirements of Digital vs. RF and Tiled Beamforming in mm-Wave Massive MIMO,” presented at the 2021 IEEE Radio and Wireless Symposium (RWS), San Diego, CA, January 17-22, 2021.