Creates aluminum nitride-based transistors to serve as the central component for next generation power amplifiers in THz communication systems.
Designs and implements high power transistors that can operate at ultra-high frequencies well above 100 GHz, which are is an enabling technology for 6G wireless communications.
Develops and demonstrates practical Terahertz power amplifier technology based on N-polar GaN HEMTs integrated with diamond thermal management units.
Studies the prospect of Cd3As2 material for RF electronics.
Develops new generations of transistors for more efficient 100-1000GHz power amplifiers and more sensitive 100-1000GHz low-noise amplifiers.
Srabanti Chowdhury, Associate Professor
Teams: Integral Diamond Cooling of Gallium Nitride Power Transistors
Debdeep Jena, Professor
Electrical and Computer Engineering
Teams: High-frequency Gallium Nitride Power Devices
Umesh Mishra, Professor
UC Santa Barbara
Teams: High Speed GaN Power Transistors
Susanne Stemmer, Professor
University of California Santa Barbara
Teams: Next-Generation Materials and Devices for RF
Huili Xing, Professor