Devices

High-frequency Gallium Nitride Power Devices

Creates aluminum nitride-based transistors to serve as the central component for next generation power amplifiers in THz communication systems.

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High-speed Gallium Nitride Power Transistors

Designs and implements high power transistors that can operate at ultra-high frequencies well above 100 GHz, which are is an enabling technology for 6G wireless communications.

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Integral Diamond Cooling of Gallium Nitride Power Transistors

Develops and demonstrates practical Terahertz power amplifier technology based on N-polar GaN HEMTs integrated with diamond thermal management units.

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Next-Generation Materials and Devices for RF

Studies the prospect of Cd3As2 material for RF electronics.

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THz InP Power- and Low-noise Transistors

Develops new generations of transistors for more efficient 100-1000GHz power amplifiers and more sensitive 100-1000GHz low-noise amplifiers.

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Devices
Team Leaders

Srabanti Chowdhury

Srabanti Chowdhury, Associate Professor

Electrical Engineering

Stanford University

Themes:

Teams: Integral Diamond Cooling of Gallium Nitride Power Transistors

Debdeep Jena

Debdeep Jena, Professor

Electrical and Computer Engineering

Cornell University

Themes:

Teams: High-frequency Gallium Nitride Power Devices

Umesh Mishra

Umesh Mishra, Professor

Electrical and Computer Engineering

UC Santa Barbara

Themes:

Teams: High Speed GaN Power Transistors

Susanne Stemmer

Susanne Stemmer, Professor

Materials

University of California Santa Barbara

Themes:

Teams: Next-Generation Materials and Devices for RF

Huili Xing

Huili Xing, Professor

Electrical and Computer Engineering

Cornell University

Themes:

Teams: High-frequency Gallium Nitride Power Devices