High-frequency Gallium Nitride Power Devices
Creates aluminum nitride-based transistors to serve as the central component for next generation power amplifiers in THz communication systems.
Devices
High-speed Gallium Nitride Power Transistors
Designs and implements high power transistors that can operate at ultra-high frequencies well above 100 GHz, which are is an enabling technology for 6G wireless communications.
Integral Diamond Cooling of Gallium Nitride Power Transistors
Develops and demonstrates practical Terahertz power amplifier technology based on N-polar GaN HEMTs integrated with diamond thermal management units.
Next-Generation Materials and Devices for RF
Studies the prospect of Cd3As2 material for RF electronics.
THz InP Power- and Low-noise Transistors
Develops new generations of transistors for more efficient 100-1000GHz power amplifiers and more sensitive 100-1000GHz low-noise amplifiers.
Devices
Team Leaders
Srabanti Chowdhury, Associate Professor
Electrical Engineering
Stanford University
Themes:
Teams: Integral Diamond Cooling of Gallium Nitride Power Transistors
